spp3413 description applications the spp3413 is the p-channel logic enhancement mode power field effect transistors are produced using high cell density , dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. z power management in note book z portable equipment z battery powered system z dc/dc converter z load switch z dsc z lcd display inverter features pin configuration(sot-23-3l) part marking ? -20v/-3.4a,r ds(on) = 95m ? @v gs =-4.5v ? -20v/-2.4a,r ds(on) =120m ? @v gs =-2.5v ? -20v/-1.7a,r ds(on) =145m ? @v gs =-1.8v ? -20v/-1.0a,r ds(on) =210m ? @v gs =-1.25v ? super high density cell design for extremely low rds (on) ? exceptional on-resistance and maximum dc current capability ? sot-23-3l package design product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
pin description pin symbol description 1 g gate 2 s source 3 d drain ordering information part number package part marking SPP3413S23RG sot-23-3l 13yw week code : a ~ z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) SPP3413S23RG : tape reel ; pb ? free absoulte maximum ratings (t a =25 unless otherwise noted) parameter symbol typical unit drain-source voltage v dss -20 v gate ?source voltage v gss 12 v t a =25 -3.5 continuous drain current(t j =150 ) t a =70 i d -2.8 a pulsed drain current i dm -15 a continuous source current(diode conduction) i s -1.4 a t a =25 1.25 power dissipation t a =70 p d 0.8 w operating junction temperature t j -55/150 storage temperature range t stg -55/150 thermal resistance-junction to ambient r ja 105 /w spp3413 product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (t a =25 unle ss otherwise noted) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =-250ua -20 gate threshold voltage v gs(th) v ds =v gs ,i d =-250ua -0.35 -0.8 v gate leakage current i gss v ds =0v,v gs =12v 100 na v ds =-20v,v gs =0v -1 zero gate voltage drain current i dss v ds =-20v,v gs =0v t j =55 -5 ua on-state drain current i d(on) v ds Q -5v,v gs =-4.5v -6 a v gs =-4.5v,i d =-3.4a 0.076 0.095 v gs =-2.5v,i d =-2.4a 0.097 0.120 v gs =-1.8v,i d =-1.7a 0.123 0.145 drain-source on-resistance r ds(on) v gs =-1.25v,i d =-1.0a 0.185 0.210 ? forward transconductance gfs v ds =-5v,i d =-2.8a 6 s diode forward voltage v sd i s =-1.5a,v gs =0v -0.8 -1.2 v dynamic total gate charge q g 4.8 8 gate-source charge q gs 1.0 gate-drain charge q gd v ds =-6v,v gs =-4.5v i d -2.8a 1.0 nc input capacitance c iss 485 output capacitance c oss 85 reverse transfer capacitance c rss v ds =-6v,v gs =0v f=1mhz 40 pf t d(on) 10 16 turn-on time t r 13 23 t d(off) 18 25 turn-off time t f v dd =-6v,r l =6 ? i d -1.0a,v gen =-4.5v r g =6 ? 15 20 ns spp3413 product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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